upa1814gr-9jg Renesas Electronics Corporation., upa1814gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1814gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

1000
1000
100
0.1
100
10
0.001
10
1
12
10
8
6
4
2
0
1
0.1
V
V
R
I
DD
GS(on)
G
D
Mounted on ceramic
substrate of 50 cm
Single Pulse
= 10
= 7.0 A
= 15 V
DYNAMIC INPUT CHARACTERISTICS
SWITCHING CHARACTERISTICS
5
= 10 V
V
DD
10
= 24 V
I
Q
D
0.01
g
- Drain Current - A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
15 V
- Gate Charge - nC
15
6 V
2
x 1.1 mm
20
1
td
td
(off)
(on)
25
0.1
30
PW - Pulse Width - s
35
Data Sheet D13804EJ2V0DS
tf
tr
40
10
1
10
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.01
100
0.1
10
0.4
1
100
V
F(S-D)
62.5 ˚C/W
0.6
- Source to Drain Voltage - V
1000
0.8
1.0
1.2
PA1814
5