upa1812gr-9jg Renesas Electronics Corporation., upa1812gr-9jg Datasheet - Page 3

• Manufacturer Part Number: upa1812gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
1.6
1.4
1.2
1.0
1.8
2.0
80
60
40
20
10
15
20
0
5
0
50
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
V
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
GS
= 10 V
T
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
30
ch
T
0.2
V
A
0
- Channel Temperature - ˚C
DS
- Ambient Temperature - ˚C
- Drain to Source Voltage - V
60
0.4
50
90
0.6
4.0 V
A
100
V
I
= 25°C)
120
D
4.5 V
DS
= 1 mA
0.8
= 10 V
Data Sheet D12967EJ2V0DS
150
150
1.0
!
0.0001
0.001
0.01
100
100
0.1
0.1
0.01
10
10
100
1
0.1
1
10
0.1
0.1
1
0
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
FORWARD TRANSFER CHARACTERISTICS
V
V
T
Single Pulse
Mounted on Ceramic
Substrate of 5000 mm x 1.1 mm
T
FORWARD BIAS SAFE OPERATING AREA
DS
A
DS
A
= 25˚C
= 125˚C
= 10 V
= 10 V
V
75˚C
V
GS
DS
1.0
- Gate to Source Voltage - V
- Drain to Source Voltage - V
I
D(DC)
I
1
1.0
I
D(pulse)
D
2
- Drain Current - A
2.0
10
10.0
T
T
A
A
3.0
= 25˚C
= 25 ˚C
25˚C
125 ˚C
25 ˚C
75 ˚C
PA1812
100
4.0
100.0
3