upa1812gr-9jg Renesas Electronics Corporation., upa1812gr-9jg Datasheet - Page 5

• Manufacturer Part Number: upa1812gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

1000
100
10
10
0
8
6
4
2
0.1
V
V
R
DD
GS(on)
G
I
D
= 10
= 10 V
DYNAMIC INPUT CHARACTERISTICS
= 5 A
SWITCHING CHARACTERISTICS
5
= 4 V
!
10
Q
I
D
1000
0.1
g
100
- Drain Current - A
0.001
10
- Gate Charge - nC
V
1
DD
15
Mounted on ceramic
substrate of 50 cm
Single Pulse
= 24 V
1
20
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
25
2
x 1.1 mm
30
tr
td
td
tf
Data Sheet D12967EJ2V0DS
(off)
(on)
0.1
35
10
PW - Pulse Width - s
1
0.0001
0.001
0.01
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
0.1
10
0.4
1
10
V
F(S-D)
- Source to Drain Voltage - V
0.6
100
62.5 ˚C/W
1000
0.8
PA1812
1
5