upa1801gr-9jg Renesas Electronics Corporation., upa1801gr-9jg Datasheet - Page 4

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upa1801gr-9jg

Manufacturer Part Number
upa1801gr-9jg
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
4
20
15
10
10
35
30
25
30
25
20
15
50
30
40
20
10
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.1
0.1
0
V
V
GS
GS
= 2.5 V
= 4.5 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
T
V
T
A
GS
A
= 125
= 125
- Gate to Source Voltage - V
I
I
D
D
75
25
25
1
- Drain Current - A
75
25
- Drain Current - A
25
1
5
˚C
˚C
˚C
˚C
˚C
˚C
˚C
˚C
10
10
10
I
D
= 3.0 A
Data Sheet D12135EJ1V0DS00
100
100
15
10000
1000
100
10
10
35
30
25
20
15
10
30
25
20
15
5
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.1
0.1
50
I
V
f = 1 MHz
V
D
GS
GS
= 3.0 A
= 0 V
= 4.0 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Tch - Channel Temperature -
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
T
V
0
A
DS
I
D
= 125
1
- Drain Source Voltage - V
- Drain Current - A
1
75
25
25
˚C
˚C
˚C
˚C
50
10
10
V
100
GS
C
C
C
oss
= 2.5 V
iss
rss
˚C
4.0 V
4.5 V
100
100
150
PA1801

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