upa1801gr-9jg Renesas Electronics Corporation., upa1801gr-9jg Datasheet - Page 5

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upa1801gr-9jg

Manufacturer Part Number
upa1801gr-9jg
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1000
100
10
1
0.01
0
4
3
2
1
5
V
V
R
I
DD
GS(on)
G
D
= 10
= 6.0 A
= 10 V
DYNAMIC INPUT CHARACTERISTICS
SWITCHING CHARACTERISTICS
=
4.0
4
1000
0.1
V
100
0.001
10
1
V
I
Q
D
0.1
DD
g
- Drain Current - A
8
Mounted on ceramic
substrate of 5000 mm
Single Pulse
- Gate Charge - nC
= 8 V
10 V
16 V
td
(off)
12
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
16
1
2
x 1.1 mm
20
td
(on)
Data Sheet D12135EJ1V0DS00
tr
tf
0.1
10
24
PW - Pulse Width - s
1
0.0001
0.001
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.01
0.1
10
1
0.2
10
V
F(S-D)
0.4
- Source to Drain Voltage - V
100
62.5 ˚C/W
0.6
1000
0.8
V
GS
= 0 V
1
PA1801
5

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