upa1855 Renesas Electronics Corporation., upa1855 Datasheet - Page 2

• Manufacturer Part Number: upa1855
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
TEST CIRCUIT 1 SWITCHING TIME
2
V
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
0
GS
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
G
R
= 10
1 %
G
D.U.T.
R
V
L
DD
V
Wave Form
I
Wave Form
D
GS
SYMBOL
R
R
R
V
V
| y
V
I
t
t
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
Q
D
GS(off)
C
Q
A
d(on)
d(off)
F(S-D)
Q
DSS
GSS
GS
t
t
t
0
0
oss
GS
GD
rr
fs
iss
rss
r
f
G
rr
10 %
= 25 °C)
10 %
|
t
d(on)
Data Sheet D13454EJ2V0DS
t
90 %
V
V
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
I
V
I
I
di/dt = 15 A / s
on
D
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS(on)
DD
GS
G
= 3.0 A
= 6.0 A
= 6.0 A, V
= 6.0 A, V
t
r
= 10
= 20 V, V
= ±12 V, V
= 10 V, I
= 10 V, I
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
= 10 V
= 0 V
= 10 V
= 10 V
= 4.0 V
V
I
GS(on)
D
= 4.0 V
t
d(off)
TEST CONDITIONS
t
GS
GS
off
D
D
90 %
90 %
D
D
D
GS
= 1 mA
= 3.0 A
t
10 %
f
= 3.0 A
= 3.0 A
= 3.0 A
= 0 V
= 0 V
DS
= 0 V
= 0 V
PG.
TEST CIRCUIT 2 GATE CHARGE
I
G
50
= 2 mA
MIN.
0.5
1
D.U.T.
TYP.
13.3
0.82
980
293
205
247
480
659
1.0
8.8
2.2
3.2
2.2
17
18
22
86
44
MAX.
±10
1.5
10
23
24
29
R
V
UNIT
L
DD
PA1855
m
m
m
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A