upa1855 Renesas Electronics Corporation., upa1855 Datasheet - Page 5

• Manufacturer Part Number: upa1855
• Description: Mos Field Effect Transistor
• Manufacturer: Renesas Electronics Corporation.

1000
100
10
5
4
3
2
1
0
0.1
0
V
V
R
DD
GS
I
G
D
(
= 10
DYNAMIC INPUT CHARACTERISTICS
= 6.0 A
1
= 10V
on
SWITCHING CHARACTERISTICS
) = 4.0V
2
1000
Q
I
100
D
0.1
3
10
G
- Drain Current - A
1
V
- Gate Charge - nC
1m
DD
4
= 16 V
10 V
1
5
6
10m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
7
8
9
Data Sheet D13454EJ2V0DS
td
td
tf
tr
100m
(off)
(on)
10
10
PW - Pulse Width - S
1
0.01
100
0.1
10
1
0.4
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
Mounted on ceramic board
of 50cm x 1.1mm
Single Pulse
P
D
(FET1) : P
V
F(S-D)
0.6
2
100
- Source to Drain Voltage - V
D
62.5 ˚C/W
(FET2) = 1:1
0.8
1000
1.0
PA1855
1.2
5