upa1874b Renesas Electronics Corporation., upa1874b Datasheet - Page 2

• Manufacturer Part Number: upa1874b
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed: PW ≤ 350
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
0
TEST CIRCUIT 1 SWITCHING TIME
GS
τ = 1 s
Duty Cycle ≤ 1%
PG.
µ
τ
CHARACTERISTICS
R
G
D.U.T.
µ
s, Duty Cycle ≤ 2%
Note
Note
R
V
DD
L
Note
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
R
V
V
| y
V
V
I
DS(on)1
DS(on)2
DS(on)3
DS(on)4
C
t
t
Q
Q
I
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
DSS
GSS
V
t
t
GS
DS
t
oss
A
iss
rss
GS
GD
rr
fs
r
f
0
0
G
DS
rr
|
= 25°C)
10%
t
90%
d(on)
Data Sheet G16743EJ1V0DS
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 50 A/
t
D
F
F
on
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 8.0 A, V
= 8.0 A, V
= 8.0 A
10% 10%
t
= 10 Ω
r
= 30.0 V, V
= 10.0 V, I
= 10.0 V, I
= 10.0 V
= ±12.0 V, V
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
= 0 V
= 10.0 V, I
= 4.0 V
= 24.0 V
= 4.0 V
V
TEST CONDITIONS
GS
t
d(off)
GS
GS
µ
t
D
D
D
D
s
off
90%
D
D
D
= 0 V
= 0 V
= 4.0 A
= 4.0 A
= 4.0 A
= 4.0 A
GS
90%
t
= 1.0 mA
= 4.0 A
= 4.0 A
f
DS
= 0 V
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
0.50
10.0
11.0
9.0
9.5
5
I
G
TYP.
1.00
11.5
12.0
13.0
15.0
10.0
0.82
50 Ω
= 2 mA
930
170
120
230
260
250
150
2.0
4.5
46
80
D.U.T.
MAX.
±10.0
1.50
14.0
14.5
16.5
19.5
1.0
µ
PA1874B
UNIT
mΩ
mΩ
mΩ
mΩ
µ
µ
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
DD
L