upa1874b Renesas Electronics Corporation., upa1874b Datasheet - Page 5

• Manufacturer Part Number: upa1874b
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
1000
100
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
20
10
40
30
20
10
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
0
0.1
0.1
0
T
A
= 125°C
V
−25°C
V
2
75°C
25°C
DS
GS
- Drain to Source Voltage - V
- Gate to Source Voltage - V
I
D
- Drain Current - A
1
4
1
6
10
10
8
V
f = 1.0 MHz
V
Pulsed
GS
GS
I
Pulsed
D
10
= 0 V
= 3.1 V
= 4.0 A
C
C
C
iss
oss
rss
Data Sheet G16743EJ1V0DS
100
100
12
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
20
10
100
40
30
20
10
0
10
0
-50
0.1
0.1
T
A
SWITCHING CHARACTERISTICS
= 125°C
T
−25°C
t
V
75°C
25°C
ch
t
t
d(off)
t
r
d(on)
f
GS
- Channel Temperature - °C
0
I
= 2.5 V
D
I
D
- Drain Current - A
3.1 V
4.0 V
4.5 V
- Drain Current - A
1
50
1
10
V
V
R
DD
GS
G
100
= 10 Ω
µ
V
Pulsed
= 10.0 V
= 4.0 V
I
Pulsed
D
GS
= 4.0 A
PA1874B
= 2.5 V
150
100
10
5