upa1830 Renesas Electronics Corporation., upa1830 Datasheet - Page 3

• Manufacturer Part Number: upa1830
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
- 0.01
- 100
- 0.1
- 10
120
100
- 1
80
60
40
20
0
- 0.1
FORWARD BIAS SAFE OPERATING AREA
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
R
(V
Single pulse
Mounted on ceramic
substrate of 5000 mm
DS(on)
GS
V
= 10 V)
25
T
DS
Limited
A
- Ambient Temperature - C
- Drain to Source Voltage - V
I
D(DC)
1000
50
100
0.1
10
- 1
1
1 m
I
D(pulse)
Single pulse
75
2
x 1.1 mm
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
- 10
10 m
125
A
PW = 1 ms
= 25°C)
150
10 ms
100 ms
DC
100 m
Data Sheet G16268EJ1V0DS
- 100
175
Mounted on FR-4 board
of 2500 mm
125°C/W
PW - Pulse Width - s
2
x 1.6 mm
Mounted on ceramic
substrate of 5000 mm
62.5°C/W
1
2.5
1.5
0.5
10
2
1
0
0
2
x 1.1 mm
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
- Ambient Temperature - C
100
50
Mounted on ceramic
substrate of 5000 mm
75
1000
Mounted on FR-4 board
of 2500 mm
100
125
2
x 1.1 mm
2
x 1.6 mm
PA1830
150
175
3