upa1830 Renesas Electronics Corporation., upa1830 Datasheet - Page 5

• Manufacturer Part Number: upa1830
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

10000
1000
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
30
20
10
40
30
20
10
10
0
- 0.01
0
- 0.01
1
- 0.01
V
Pulsed
V
Pulsed
GS
GS
t
d(off)
= 4.0 V
= 10 V
SWITCHING CHARACTERISTICS
t
d(on)
t
t
f
r
- 0.1
- 0.1
T
A
I
I
D
D
= 125°C
I
D
- 0.1
75°C
25°C
25°C
- Drain Current - A
- Drain Current - A
- Drain Current - A
T
A
= 125°C
75°C
25°C
25°C
- 1
- 1
- 1
- 10
- 10
V
V
R
DD
GS
G
= 10
= 15 V
= 10 V
Data Sheet G16268EJ1V0DS
- 100
- 100
- 10
10000
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
0.01
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
100
0.1
40
30
20
10
10
1
0
- 0.01
- 0.1
0.4
V
f = 1.0 MHz
Pulsed
V
Pulsed
GS
GS
V
= 0 V
= 4.5 V
F(S-D)
V
DS
- 0.1
0.6
- Drain to Source Voltage - V
V
- Source to Drain Voltage - V
I
GS
D
- Drain Current - A
= 0 V
- 1
T
A
= 125°C
75°C
25°C
25°C
0.8
- 1
- 10
- 10
1
PA1830
C
C
C
oss
rss
iss
- 100
- 100
1.2
5