upa1914te Renesas Electronics Corporation., upa1914te Datasheet - Page 4

• Manufacturer Part Number: upa1914te
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
100
30
40
80
60
40
70
60
50
20
120
100
40
60
80
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0
0.01
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
V
V
GS
GS
= 10 V
V
= 4.0 V
GS
4
0.1
- Gate to Source Voltage - V
0.1
I
D
T
T
T
I
T
D
T
T
T
- Drain Current - A
T
A
A
A
A
A
A
A
A
- Drain Current - A
= 125˚C
= 75˚C
= 25˚C
= 25˚C
= 125˚C
= 25˚C
= 75˚C
= 25˚C
8
1
1
12
10
I
10
D
16
= 2.5 A
Data Sheet D13810EJ2V0DS
100
20
100
10000
100
100
1000
40
60
80
60
40
20
80
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.01
10
50
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
I
0.1
V
D
GS
= 2.5 A
= 4.5 V
T
V
ch
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
DS
0.1
0
I
D
T
T
- Channel Temperature -˚C
T
T
- Drain to Source Voltage - V
A
- Drain Current - A
A
A
A
= 125˚C
= 75˚C
= 25˚C
= 25˚C
1
50
1
10
V
V
V
100
10
GS
GS
GS
= 4.0 V
= 4.5 V
= 10 V
f = 1 MHz
PA1914
V
GS
C
C
C
iss
oss
rss
= 0V
100
150
100