upa1914te Renesas Electronics Corporation., upa1914te Datasheet - Page 5

• Manufacturer Part Number: upa1914te
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

!
1000
12
10
100
8
6
4
2
0
10
0
1
0.1
V
V
R
I
DD
GS
D
G
DYNAMIC INPUT CHARACTERISTICS
= 4.5 A
= 10
(
= 15V
on
2
SWITCHING CHARACTERISTICS
) = 10V
1000
100
0.1
10
Q
1
V
0.001
I
g
D
DD
4
- Gate Charge - nC
- Drain Current - A
= 24 V
15 V
6 V
6
1
0.01
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
8
10
td
td
Data Sheet D13810EJ2V0DS
tf
tr
0.1
(off)
(on)
12
PW - Pulse Width - S
10
1
0.01
100
0.1
10
1
0.4
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Mounted on 250mm x 35 m
Copper Pad
Connected to Drain Electrode
in 50mm x 50mm x 1.6mm
FR-4 Board Single Pulse
Without Board
10
V
F(S-D)
0.6
- Source to Drain Voltage - V
100
2
0.8
1000
1.0
PA1914
1.2
5