upa1916 Renesas Electronics Corporation., upa1916 Datasheet - Page 3

• Manufacturer Part Number: upa1916
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
100
1.2
0.7
0.2
80
60
40
20
20
16
12
0
8
4
0
0
0
50
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
Pulsed
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
0.2
30
V
T
T
DS
GS
ch
A
- Drain to Source Voltage - V
0
- Ambient Temperature - ˚C
- Channel Temperature - ˚C
= 4.5 V
60
0.4
1.8 V
50
90
0.6
A
100
= 25°C)
2.5 V
120
0.8
V
I
D
4.0 V
DS
= 1 mA
= 10 V
Data Sheet G15635EJ1V0DS
150
150
1
0.00001
0.0001
0.001
0.01
0.01
0.01
100
100
100
0.1
0.1
0.1
10
10
10
1
1
1
0.1
0.01
0
FORWARD TRANSFER CHARACTERISTICS
Single Pulse
Mounted on 250 mm x 35 m copper
pad connected to drain erectrode in
50 mm x 50 mm x 1.6 mm FR-4 board.
V
FORWARD BIAS SAFE OPERATING AREA
T
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
DS
A
DS
= 125˚C
= 10 V
T
= 10 V
V
75˚C
V
A
DS
GS
I
= 25˚C
D(DC)
0.1
125˚C
- Drain to Source Voltage - V
- Gate to Source Voltage - V
I
25˚C
75˚C
D
- Drain Current - A
1
1
2
I
D(pulse)
T
A
= 25˚C
25˚C
1
10
2
10
100
100
3
PA1916
3