upa1916 Renesas Electronics Corporation., upa1916 Datasheet - Page 4

• Manufacturer Part Number: upa1916
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
100
100
80
60
40
20
80
60
40
70
60
50
40
30
20
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.01
0.01
50
V
I
V
D
GS
= 2.5 A
GS
T
A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 1.8 V
= 3.0 V
= 125 C
T
A
T
75 C
25 C
= 125 C
ch
25 C
0.1
0
- Channel Temperature - ˚C
75 C
25 C
25 C
I
I
D
D
0.1
- Drain Current - A
- Drain Current - A
50
1
1
100
10
V
GS
= 1.8 V
3.0 V
2.5 V
4.5 V
Data Sheet G15635EJ1V0DS
100
150
10
120
100
100
80
60
40
20
80
60
40
20
60
50
40
30
20
10
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.01
0.01
0
V
V
GS
GS
T
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
T
= 2.5 V
A
= 4.5 V
A
V
= 125 C
= 125 C
GS
25 C
75 C
0.1
25 C
0.1
75 C
25 C
2
25 C
- Gate to Source Voltage - V
I
I
D
D
- Drain Current - A
- Drain Current - A
4
1
1
10
10
6
I
D
= 2.5 A
100
100
8
PA1916