upa1902 Renesas Electronics Corporation., upa1902 Datasheet - Page 2

• Manufacturer Part Number: upa1902
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
0
TEST CIRCUIT 1 SWITCHING TIME
GS
τ = 1 s
Duty Cycle ≤ 1%
PG.
µ
τ
CHARACTERISTICS
R
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
V
V
| y
V
V
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
DSS
GSS
V
GS
DS
t
t
oss
A
iss
rss
GS
GD
fs
r
f
0
0
G
DS
|
= 25°C)
10%
t
d(on)
Data Sheet G16634EJ1V0DS
90%
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
t
D
F
on
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 7.0 A, V
= 7.0 A
10% 10%
t
= 6.0 Ω
r
= 15 V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V
= ±20 V, V
= 10 V, I
= 4.5 V, I
= 0 V
= 15 V, I
= 10 V
= 5.0 V
V
GS
t
d(off)
TEST CONDITIONS
GS
D
D
D
D
t
off
D
GS
90%
= 1.0 mA
= 3.5 A
= 3.5 A
= 1.0 A
DS
= 0 V
= 3.5 A
90%
t
= 0 V
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
1.5
3.0
I
G
50 Ω
= 2 mA
TYP.
0.84
780
180
120
108
2.0
8.0
2.7
3.4
17
22
16
10
56
D.U.T.
MAX.
±100
1.0
2.5
22
30
µ
PA1902
UNIT
mΩ
mΩ
µ
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
S
V
A
R
V
DD
L