upa1902 Renesas Electronics Corporation., upa1902 Datasheet - Page 5

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upa1902

Manufacturer Part Number
upa1902
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet

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1000
100
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
80
60
40
20
10
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
9
8
7
6
5
4
3
2
1
0
0
0.1
0
0
V
f = 1 M Hz
V
I
D
GS
GS
= 7.0 A
1
= 0 V
= 5.0 V
V
V
DS
GS
2
5
- Drain to Source Voltage - V
- Gate to Source Voltage - V
Q
V
G
3
DD
- Gate Charge - nC
1
= 24 V
10
15 V
4
6 V
5
I
15
D
6
= 3.5 A
10
7
20
8
Pulsed
C
C
C
oss
r ss
i ss
9
Data Sheet G16634EJ1V0DS
100
10
25
1000
0.01
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
0.1
10
10
50
40
30
20
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1
1
0
0.1
-50
0.4
I
Pulsed
V
V
R
Pulsed
D
DD
GS
G
= 3.5 A
V
SWITCHING CHARACTERISTICS
= 6.0 Ω
= 15 V
= 10 V
F(S-D)
T
0.6
ch
- Source to Drain Voltage - V
- Channel Temperature - °C
0
I
D
- Drain Current - A
0.8
50
1
1
V
100
GS
t
t
t
t
d(off)
f
d(on)
r
1.2
µ
= 4.5 V
10 V
PA1902
150
10
1.4
5

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