upa1980 Renesas Electronics Corporation., upa1980 Datasheet - Page 2
upa1980
Manufacturer Part Number
upa1980
Description
P-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1980.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
upa1980TE-T1
Manufacturer:
NEC
Quantity:
74 000
Company:
Part Number:
upa1980TE-T2
Manufacturer:
NEC
Quantity:
98 000
MOS FET ABSOLUTE MAXIMUM RATINGS (T
Notes 1. PW
SCHOTTKY BARRIER DIODE ABSOLUTE MAXIMUM RATINGS (T
Notes 3. Mounted on FR-4 board of 5000 mm
2
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
Repetitive Peak Reverse Voltage
Average Forward Current
Surge Current
Junction Temperature
Storage Temperature
2. Mounted on FR-4 board of 5000 mm
4. 50 Hz sine wave, 1 cycle
Note4
10 s, Duty Cycle
Note1
Note2
Note3
DS
GS
= 0 V)
= 0 V)
1%
2
2
Data Sheet G16550EJ1V0DS
x 1.1 mm
x 1.1 mm, t
I
D(pulse)
I
V
V
V
I
D(DC)
I
T
F(AV)
T
T
P
FSM
RRM
GSS
T
DSS
A
stg
stg
ch
T
j
= 25°C)
5 sec.
55 to +125
55 to +125
+125
m8.0
m2.0
m8.0
0.57
150
20.0
0.5
5.5
40
°C
°C
°C
°C
W
V
V
A
A
V
A
A
A
= 25°C)
PA1980