upa1980 Renesas Electronics Corporation., upa1980 Datasheet - Page 4

• Manufacturer Part Number: upa1980
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

MOS FET TYPICAL CHARACTERISTICS (T
4
- 0 .01
- 1 00
- 0 .1
- 1 0
120
100
80
60
40
20
- 1
0
- 0 .1
FORWARD BIAS SAFE OPERATING AREA
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
S ingle p ulse
M o unted on F R -4 bo ard o f
500 0 m m
R
(V
D S (o n)
G S
25
V
T
= –4.5 V )
DS
A
Lim ite d
- Drain to Source Voltage - V
- Ambient Temperature - C
1000
2
I
50
D (D C )
100
x 1.1 m m
10
- 1
1
1 m
75
I
D (pu lse)
100
- 1 0
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10 m
125
P W = 1 m s
10 m s
100 m s
5 s
150
Data Sheet G16550EJ1V0DS
- 1 00
100 m
175
A
= 25°C)
PW - Pulse Width - s
1
0.6
0.5
0.4
0.3
0.2
0.1
0
Single pulse
Mounted on FR-4 board of
5000 mm
PD (FET) : P (SBD) = 1:0
10
0
25
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
T
A
2
x 1.1 mm
- Ambient Temperature - C
50
100
Mounted on FR-4 board of
5000 mm
75
2
100
x 1.1 mm, t
1000
125
150
PA1980
5 sec.
175