upa1552b Renesas Electronics Corporation., upa1552b Datasheet

upa1552b

Manufacturer Part Number

upa1552b

Description

N-channel Power Mos Fet Array Switching Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1552B.pdf (8 pages)

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Company:

Meier Automation Equipment Co., Limited

Part Number:

upa1552bH

Manufacturer:

NEC

Quantity:

20 000

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Document No. G10599EJ2V0DS00 (2nd edition)

Date Published December 1995 P

Printed in Japan

DESCRIPTION

that built in 4 circuits designed, for solenoid, motor and

lamp driver.

FEATURES

• 4 V driving is possible

• Large Current and Low On-state Resistance

• Low Input Capacitance Ciss = 200 pF TYP.

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

PA1552BH

Type Number

The PA1552B is N-channel Power MOS FET Array

Notes 1. V

The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

D(DC)

DS(on)1

DS(on)2

= 5.0 A

3. PW

5. 4 Circuits, T

0.18

0.24

= 0

10 Pin SIP

10 s, Duty Cycle

MAX. (V

Package

N-CHANNEL POWER MOS FET ARRAY

= 25 ˚C

COMPOUND FIELD EFFECT POWER TRANSISTOR

D(DC)

D(pulse)

DSS

GSS

stg

= 10 V, I

= 4 V, I

Note 6

Note 4

Note 5

Note 6

Note 2

Note 1

Note 3

1 %

= 3 A)

DATA SHEET

SWITCHING USE

–55 to +150

= 25 ˚C)

150

3.5

5.0

2.5

5.0

2. V

4. 4 Circuits, T

6. Starting T

A/unit

˚ C

= 25

= 0

, L = 100 H

= 25 ˚C, V

= 25 ˚C

1.4 0.6±0.1

CONNECTION DIAGRAM

PACKAGE DIMENSIONS

2 3 4 5 6 7 8 9

26.8 MAX.

= 30 V, V

in millimeters

PA1552B

ELECTRODE CONNECTION

2, 4, 6, 8

3, 5, 7, 9

1, 10

2.54

= 20 V

: Gate

: Drain

: Source

4.0

0.5±0.1

1.4

1995

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upa1552b Summary of contents

Page 1

COMPOUND FIELD EFFECT POWER TRANSISTOR N-CHANNEL POWER MOS FET ARRAY DESCRIPTION The PA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and lamp driver. FEATURES • driving is possible • Large ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTIC SYMBOL Drain Leakage Current I DSS Gate Leakage Current I GSS Gate Cutoff Voltage V GS(off) Forward Transfer Admittance | Drain to Source On-State R DS(on)1 Resistance R DS(on)2 Input Capacitance C iss ...

Page 3

CHARACTERISTICS ( ˚C) A TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 6 Under same NEC dissipation in PA1552BH Lead each circuit 5 Print Circuit 4 Circuits operation Boad 4 3 Circuits operation 2 Circuits operation 3 1 Circuit operation ...

Page 4

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000 Single Pulse, For each Circuit 100 10 1.0 0 100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T = -25 ˚ ˚C 75 ˚C 125 ˚C 1.0 ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 200 150 100 100 Channel Temperature -˚C CH CAPACITANCE vs. DRAIN TO ...

Page 6

SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 1 Starting ˚C CH 0.1 10 100 ...

Page 7

PA1552B 7 ...

Page 8

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC ...

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