upa1552b Renesas Electronics Corporation., upa1552b Datasheet - Page 2

• Manufacturer Part Number: upa1552b
• Description: N-channel Power Mos Fet Array Switching Use
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Test Circuit 1
Drain Leakage Current
Gate Leakage Current
Gate Cutoff Voltage
Forward Transfer Admittance
Drain to Source On-State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Test Circuit 3
GS
PG.
= 20 V
CHARACTERISTIC
PG
0
I
G
50
= 2 mA
R
V
G
DD
= 25
D.U.T.
Avalanche Capability
Gate Charge
I
50
D
D.U.T.
I
AS
BV
DSS
R
V
L
DD
Starting T
SYMBOL
V
I
I
V
| Y
R
R
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
DS
GS(off)
DS(on)1
DS(on)2
iss
oss
rss
F(S-D)
G
GS
GD
rr
L
V
fs
DD
|
CH
V
V
V
V
V
V
V
I
R
V
I
I
D
F
F
A
Test Circuit 2
DS
GS
DS
DS
GS
GS
DS
GS
L
V
0
= 5.0 A, V
= 5.0 A, V
= 3.0 A, V
= 10
GS
= 25 ˚C)
= 60 V, V
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 4.0 V, I
= 10 V, V
= 10 V, I
t = 1
Duty Cycle
PG.
TEST CONDITIONS
t
s
GS
GS
GS
D
D
D
D
D
GS
GS
= 1.0 mA
= 3.0 A
= 3.0 A
= 5.0 A, V
DS
= 0
= 0, di/dt = 50 A/ s
= 3.0 A
= 10 V, V
= 0
= 0, f = 1.0 MHz
1 %
R
= 0
G
= 10
Switching Time
R
G
D.U.T.
DD
DD
·
= 30 V,
= 48 V
·
R
V
L
DD
MIN.
V
Wave Form
I
Wave Form
1.0
2.4
D
GS
V
I
D
TYP.
0.09
0.12
GS
200
150
100
670
310
280
820
4.7
1.0
55
20
13
2
0
0
10 %
10 %
t
d (on)
MAX.
0.18
0.24
t
on
2.0
90 %
10
10
t
r
I
V
D
GS (on)
PA1552B
t
UNIT
d (off)
nC
nC
pF
pF
pF
nC
nC
ns
ns
ns
ns
ns
V
S
V
A
A
t
off
90 %
90 %
10 %
t
f