pmwd18un-01 NXP Semiconductors, pmwd18un-01 Datasheet - Page 7

• Manufacturer Part Number: pmwd18un-01
• Description: Dual N-channel Mtrenchmos Ultra Low Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 14719
Product data sheet
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances
(pF)
V
C
GS(th)
(V)
10
10
10
1.2
0.9
0.6
0.3
10
4
3
2
0
I
junction temperature
V
as a function of drain-source voltage; typical
values
-60
10
D
GS
= 1 mA; V
-1
= 0 V; f = 1 MHz
0
DS
= V
1
GS
max
min
typ
60
10
120
V
DS
003aaa263
T
(V)
C
j
C
C
( C)
03aj65
oss
iss
rss
180
10
Rev. 03 — 1 July 2005
2
Fig 10. Sub-threshold drain current as a function of
Fig 12. Source current as a function of source-drain
Dual N-channel TrenchMOS ultra low level FET
(A)
I
(A)
D
10
10
10
10
I
S
6
5
4
3
2
1
0
3
4
5
6
T
gate-source voltage
T
voltage; typical values
0
0
j
j
= 25 C; V
= 25 C and 150 C; V
0.2
0.2
DS
min
= 5 V
T
j
= 150 C
0.4
0.4
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
GS
typ
PMWD18UN
0.6
0.6
= 0 V
25 C
max
0.8
0.8
003aaa264
V
V
GS
SD
03aj64
(V)
(V)
1
1
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