mtsf2p03hdr2 Freescale Semiconductor, Inc, mtsf2p03hdr2 Datasheet

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mtsf2p03hdr2

Manufacturer Part Number
mtsf2p03hdr2
Description
Tmos Single P-channel Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
MTSF2P03HDR2
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
Medium Power Surface Mount Products
TMOS Single P-Channel
Field Effect Transistor
which utilize Motorola’s High Cell Density HDTMOS process to
achieve lowest possible on–resistance per silicon area. They are
capable of withstanding high energy in the avalanche and commuta-
tion modes and the drain–to–source diode has a very low reverse
recovery time. Micro8
high speed switching applications where power efficiency is important.
Typical applications are dc–dc converters, and power management in
portable and battery powered products such as computers, printers,
cellular and cordless phones. They can also be used for low voltage
motor controls in mass storage products such as disk drives and tape
drives. The avalanche energy is specified to eliminate the guesswork
in designs where inductive loads are switched and offer additional
safety margin against unexpected voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Micro8 is a registered trademark of International
Rectifier. Thermal Clad is a trademark of the Bergquist Company.
REV 3
Motorola, Inc. 1997
Motorola TMOS Power MOSFET Transistor Device Data
Micro8
Miniature Micro8 Surface Mount Package — Saves Board Space
Extremely Low Profile (<1.1 mm) for thin applications such as
PCMCIA cards
Ultra Low R DS(on) Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive — Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I DSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
DEVICE MARKING
devices are an advanced series of power MOSFETs
AE
AE
devices are designed for use in low voltage,
Data Sheet
MTSF2P03HDR2
Device
Reel Size
ORDERING INFORMATION
13
G
12 mm embossed tape
D
Tape Width
S
MTSF2P03HD
Source
Source
Source
R DS(on) = 0.090 OHM
Gate
CASE 846A–02, Style 1
Motorola Preferred Device
POWER MOSFET
SINGLE TMOS
2.7 AMPERES
30 VOLTS
Order this document
Top View
Micro8
1
2
3
4
by MTSF2P03HD/D
4000 units
Quantity
8
7
6
5
Drain
Drain
Drain
Drain
1

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mtsf2p03hdr2 Summary of contents

Page 1

... AE AE MTSF2P03HDR2 Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves — representing boundaries on device characteristics — are given to facilitate “worst case” design. ...

Page 2

MTSF2P03HD MAXIMUM RATINGS ( unless otherwise noted) Negative sign for P–Channel devices omitted for clarity Drain–to–Source Voltage Drain–to–Gate Voltage ( 1.0 MΩ) Gate–to–Source Voltage — Continuous 1 inch SQ. FR–4 or G–10 PCB Figure ...

Page 3

ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc, V ...

Page 4

MTSF2P03HD TYPICAL ELECTRICAL CHARACTERISTICS 4 4 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Region Characteristics 0.3 0.25 0.2 0.15 ...

Page 5

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (∆t) are deter- mined by how fast the FET input capacitance can be charged by current from ...

Page 6

MTSF2P03HD TOTAL GATE CHARGE (nC) Figure 10. Gate–To–Source and Drain–To–Source Voltage versus Total Charge DRAIN–TO–SOURCE ...

Page 7

The Forward Biased Safe Operating Area curve (Figure 14) defines the maximum simultaneous drain–to–source vol- tage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a ...

Page 8

MTSF2P03HD TYPICAL ELECTRICAL CHARACTERISTICS 1000 D = 0.5 100 0.2 0.1 0.05 10 0.02 0.01 1.0 SINGLE PULSE 0.1 1.0E–05 1.0E–04 1.0E–03 Figure 17. Diode Reverse Recovery Waveform 8 P (pk DUTY CYCLE ...

Page 9

INFORMATION FOR USING THE Micro8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure ...

Page 10

MTSF2P03HD For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control ...

Page 11

Micro8 Dimensions are shown in millimeters (inches) 2.05 (.080) 1.95 (.077) PIN 4.10 (.161) NUMBER 1 3.90 (.154) 12.30 11.70 (.484) (.461) FEED DIRECTION NOTES: 1. CONFORMS TO EIA–481–1. 2. CONTROLLING DIMENSION: MILLIMETER. 330.0 (13.20) MAX. NOTES: 1. CONFORMS TO ...

Page 12

MTSF2P03HD –A– K PIN SEATING –T– PLANE 0.038 (0.0015) H Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products ...

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