k6r4008c1c-e Samsung Semiconductor, Inc., k6r4008c1c-e Datasheet - Page 2

• Manufacturer Part Number: k6r4008c1c-e
• Description: 512kx8 Bit High Speed Static Ram 5v Operating . Operated At Extended And Industrial Temperature Ranges.
• Manufacturer: Samsung Semiconductor, Inc.

K6R4008C1C-C, K6R4008C1C-E, K6R4008C1C-I CMOS SRAM
FEATURES
FUNCTIONAL BLOCK DIAGRAM
• Fast Access Time 10,12,15ns(Max.)
• Low Power Dissipation
• Single 5.0V 10% Power Supply
• TTL Compatible Inputs and Outputs
• I/O Compatible with 3.3V Device
• Fully Static Operation
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
512K x 8 Bit High-Speed CMOS Static RAM
A
A
A
A
A
A
A
A
A
A
CS
WE
OE
- No Clock or Refresh required
Standby (TTL)
Operating K6R4008C1C-10 : 170mA(Max.)
0
1
2
3
4
5
6
7
8
9
I/O
1
~I/O
8
(CMOS) : 10mA(Max.)
K6R4008C1C-J : 36-SOJ-400
K6R4008C1C-T: 44-TSOP2-400BF
K6R4008C1C-12 : 160mA(Max.)
K6R4008C1C-15 : 150mA(Max.)
Clk Gen.
: 60mA(Max.)
Cont.
Data
Gen.
CLK
A
10
A
11
Pre-Charge Circuit
512 x 8 Columns
A
Column Select
Memory Array
12
1024 Rows
I/O Circuit
A
13
A
14
A
15
A
16
A
17
A
18
- 2 -
ORDERING INFORMATION
GENERAL DESCRIPTION
The K6R4008C1C is a 4,194,304-bit high-speed Static Ran-
dom Access Memory organized as 524,288 words by 8 bits.
The K6R4008C1C uses 8 common input and output lines and
has an output enable pin which operates faster than address
access time at read cycle. The device is fabricated using SAM-
SUNG s advanced CMOS process and designed for high-
speed circuit technology. It is particularly well suited for use in
high-density
K6R4008C1C is packaged in a 400 mil 36-pin plastic SOJ and
44-pin plastic TSOP type II.
K6R4008C1C-C10/C12/C15
K6R4008C1C-E10/E12/E15
K6R4008C1C-I10/I12/I15
high-speed
system
Commercial Temp.
Extended Temp.
Industrial Temp.
PRELIMINARY
applications.
September 2001
Rev 4.0
The