k6r4004c1d Samsung Semiconductor, Inc., k6r4004c1d Datasheet - Page 3

• Manufacturer Part Number: k6r4004c1d
• Description: 1m X 4 Bit High-speed Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

FEATURES
FUNCTIONAL BLOCK DIAGRAM
1M x 4 Bit High-Speed CMOS Static RAM
• Fast Access Time 10ns(Max.)
• Low Power Dissipation
• TTL Compatible Inputs and Outputs
• Fully Static Operation
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
• Operating in Commercial and Industrial Temperature range.
K6R4004C1D
A
A
A
A
A
A
A
A
A
A
CS
WE
OE
- No Clock or Refresh required
Standby (TTL)
Operating
Single 5.0V±10
0
1
2
3
4
5
6
7
8
9
I/O
1
~I/O
4
(CMOS) : 5mA(Max.)
K6R4004C1D-J : 32-SOJ-400
K6R4004C1D-K : 32-SOJ-400(Lead-Free)
K6R4004C1D-10 : 65mA(Max.)
Clk Gen.
%
: 20mA(Max.)
Power Supply
Cont.
Data
Gen.
CLK
A
10
A
11
A
Pre-Charge Circuit
1024 x 4 Columns
12
Column Select
Memory Array
A
1024 Rows
13
I/O Circuit
A
14
A
15
A
16
A
17
A
18
A
19
- 3 -
The K6R4004C1D is a 4,194,304-bit high-speed Static Random
Access Memory organized as 1,048,576 words by 4 bits. The
K6R4004C1D uses 4 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG′s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R4004C1D is packaged
in a 400 mil 32-pin plastic SOJ.
GENERAL DESCRIPTION
PIN CONFIGURATION
PIN FUNCTION
I/O
Pin Name
A
0
1
V
V
N.C
I/O
I/O
WE
Vcc
Vss
WE
CS
OE
CS
A
A
A
A
A
A
A
A
A
A
- A
~ I/O
CC
SS
0
1
2
3
4
5
6
7
8
9
1
2
19
10
11
12
13
14
15
16
4
1
2
3
4
5
6
7
8
9
Address Inputs
Write Enable
Chip Select
Output Enable
Data Inputs/Outputs
Power(+5.0V)
Ground
No Connection
SOJ
(Top View)
PRELIMINARY
Pin Function
CMOS SRAM
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
I/O
I/O
N.C
A
A
A
A
A
Vss
Vcc
A
A
A
A
A
OE
19
18
17
16
15
14
13
12
10
11
4
3
July 2004
Rev. 2.0