ao4447al Alpha & Omega Semiconductor, ao4447al Datasheet
ao4447al
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ao4447al Summary of contents
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... AO4447AL P-Channel Enhancement Mode Field Effect Transistor General Description The AO4447AL uses advanced trench technology to provide excellent R with low gate charge.This DS(ON) device is ideal for load switch and battery protection applications. -RoHS Compliant -Halogen Free SOIC Absolute Maximum Ratings T Parameter Drain-Source Voltage ...
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... AO4447AL Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4447AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 160 -10V -4V 140 - 120 100 (Volts) DS Figure 1: On-Region Characteristics(Note (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED ...
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... AO4447AL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V -17A (nC) g Figure 7: Gate-Charge Characteristics 1000 100 R DS(ON) limited 0.1 T =150°C J(Max) T =25°C A 0.01 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note ...
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... AO4447AL - VDC + Vgs Ig Vds Vgs Rg Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs -10V - Vds VDC + DUT Resistive Switching Test Circuit & Waveforms RL Vgs - DUT Vdd VDC + Vds Diode Recovery Test Circuit & Waveforms ...