ao4498l Alpha & Omega Semiconductor, ao4498l Datasheet

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ao4498l

Manufacturer Part Number
ao4498l
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductor
Datasheet
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4498L
N-Channel Enhancement Mode Field Effect Transistor
The AO4498L combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
switch and battery protection applications.
General Description
- RoHS Compliant
- Halogen Free
D
DS(ON)
B
C
C
T
T
T
T
. This device is ideal for load
C
C
C
C
=25°C
=70°C
=25°C
=70°C
SOIC-8
S
A
A D
A
G
=25°C unless otherwise noted
C
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
I
E
P
T
D
DM
AR
DS
GS
AR
D
J
, T
STG
Symbol
V
I
R
R
Features
D
R
DS
R
DS(ON)
DS(ON)
= 18A
θJA
θJL
(V) = 30V
< 7.5mΩ
< 5.5mΩ
Maximum
-55 to 150
Typ
±20
140
3.1
30
18
14
42
88
31
59
16
2
G
100% UIS Tested!
100% R
(V
(V
(V
Max
GS
GS
GS
40
75
24
= 10V)
= 10V)
= 4.5V)
g
Tested!
D
S
www.aosmd.com
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A
A

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ao4498l Summary of contents

Page 1

... AO4498L N-Channel Enhancement Mode Field Effect Transistor General Description The AO4498L combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal for load DS(ON) switch and battery protection applications. - RoHS Compliant - Halogen Free SOIC Absolute Maximum Ratings T ...

Page 2

... AO4498L Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4498L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140 10V 4.5V 120 5V 100 (Volts) DS Fig 1: On-Region Characteristics (Note (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note 25°C ...

Page 4

... AO4498L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V =18A (nC) g Figure 7: Gate-Charge Characteristics 120 100 T =25° =150° =125° 0.000001 0.00001 0.0001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability (Note ...

Page 5

... AO4498L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D θJA J, =40°C/W 1 θJA 0.1 0.01 0.001 0.00001 0.0001 0.001 Figure 16: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse θJA 40 Single Pulse 0.01 0.1 1 Pulse Width ( ...

Page 6

... AO4498L + VDC - Vgs Ig Vds Vgs Rg Vgs Vds + DUT Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs 10V + Vds VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs Diode Recovery Test Circuit & Waveforms ...

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