ao4490 Alpha & Omega Semiconductor, ao4490 Datasheet

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... AO4490 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4490/L uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 4.5V, while retaining a 20V V rating ESD protected. This device is suitable for use as a load switch and general purpose applications. AO4490 and AO4490L are electrically identical ...

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... AO4490 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

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... AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 10V 4. (Volts) DS Figure 1: On-Region Characteristics 10.0 V =4.5V GS 8.0 6.0 V =10V GS 4.0 2 (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 125° 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

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... AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =16A (nC) g Figure 7: Gate-Charge Characteristics 1000.0 100.0 R DS(ON) 10ms limited 10.0 10s 1 =150°C J(Max) 0.1 T =25°C A 0.0 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ...

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... AO4490 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 T =10S =Steady-State 100 T (°C) Ambient Figure 12: Power De-rating (Note A) Alpha & Omega Semiconductor, Ltd. 125 150 175 www.aosmd.com ...