ao4478 Alpha & Omega Semiconductor, ao4478 Datasheet

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ao4478

Manufacturer Part Number
ao4478
Description
30v N-channel Mosfet
Manufacturer
Alpha & Omega Semiconductor
Datasheet

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO4478 uses advanced trench technology to
provide excellent R
device is suitable for use as general puspose, PWM and
a load switch applications.
D
D
D
Top View
D
B
C
DS(ON)
S
C
T
T
T
T
A
A
A
A
S
=25° C
=70° C
=25° C
=70° C
, low gate charge. This
SOIC-8
S
C
G
A
AD
A
=25° C unless otherwise noted
Bottom View
C
Steady-State
Steady-State
t ≤ 10s
Symbol
V
V
I
I
Iar
Ear
P
T
D
DM
J
DS
GS
D
, T
STG
Symbol
Product Summary
V
I
R
R
100% UIS Tested
100% Rg Tested
R
R
D
DS
DS(ON)
DS(ON)
= 9A (V
JA
JL
(V) = 30V
<19m
<26m
Maximum
-55 to 150
GS
Typ
±25
9.0
7.0
3.1
2.0
30
60
17
14
31
59
16
= 10V)
30V N-Channel MOSFET
G
(V
(V
GS
GS
= 10V)
= 4.5V)
Max
40
75
24
D
S
AO4478
www.aosmd.com
Units
Units
° C/W
° C/W
° C/W
mJ
° C
W
V
V
A

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ao4478 Summary of contents

Page 1

... General Description The AO4478 uses advanced trench technology to provide excellent R , low gate charge. This DS(ON) device is suitable for use as general puspose, PWM and a load switch applications. SOIC-8 Top View Absolute Maximum Ratings T Parameter Drain-Source Voltage Gate-Source Voltage T =25° C ...

Page 2

... AO4478 Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4478 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10V (Volts) DS Figure 1: On-Region Characteristics(Note =4. =10V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage(Note 125°C 30 25° ...

Page 4

... AO4478 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V = (nC) g Figure 7: Gate-Charge Characteristics =25° =25° =150° =150° 0.000001 0.00001 Time in avalanche, t Figure 9: Single Pulse Avalanche capability ...

Page 5

... AO4478 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =75°C 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse JA 0.01 0.1 Pulse Width ( ...

Page 6

... AO4478 + VDC - Vgs Ig Vds Vgs Rg Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Gate Charge Test Circuit & Waveform Vgs 10V + Vds VDC - DUT Resistive Switching Test Circuit & Waveforms ...

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