ao4482 Alpha & Omega Semiconductor, ao4482 Datasheet

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ao4482

Manufacturer Part Number
ao4482
Description
100v N-channel Mosfet
Manufacturer
Alpha & Omega Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4482
Manufacturer:
AOS/万代
Quantity:
20 000
Part Number:
ao4482L
Manufacturer:
AOS/万代
Quantity:
20 000
Company:
Part Number:
ao4482L
Quantity:
250
Rev 3 : Dec 2010
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Avalanche energy L=0.1mH
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
The AO4482 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
General Description
D
DS(ON)
B
D
Parameter
C
C
D
Top View
T
T
T
T
. This device is ideal for boost
A
A
A
A
D
=25° C
=70° C
=25° C
=70° C
C
S
A
A D
A
S
=25° C unless otherwise noted
SO8
S
t ≤ 10s
Steady-State
Steady-State
G
Bottom View
Symbol
V
V
I
I
I
E
P
T
Symbol
D
DM
AS
www.aosmd.com
DS
GS
AS
D
J
, T
, I
R
R
, E
AR
STG
JA
JL
AR
V
I
R
R
100% UIS Tested
100% R
Product Summary
D
DS
DS(ON)
DS(ON)
(at V
Typ
31
59
16
(at V
(at V
GS
g
=10V)
Tested
GS
GS
Maximum
-55 to 150
=10V)
= 4.5V)
100
±20
3.1
42
35
61
6
5
2
100V N-Channel MOSFET
G
Max
40
75
24
D
S
100V
6A
< 37m
< 42m
AO4482
Units
Units
° C/W
° C/W
° C/W
Page 1 of 6
mJ
° C
W
V
V
A
A

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ao4482 Summary of contents

Page 1

... General Description The AO4482 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . This device is ideal for boost DS(ON) converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. SO8 Top View Absolute Maximum Ratings T =25° ...

Page 2

Electrical Characteristics (T =25° C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current ...

Page 3

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 4V 10V (Volts) DS Fig 1: On-Region Characteristics (Note (A) D Figure ...

Page 4

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =50V = (nC) g Figure 7: Gate-Charge Characteristics 100 T =25° =150° ...

Page 5

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =75° C/W JA 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Figure 12: Normalized Maximum Transient Thermal Impedance (Note ...

Page 6

VDC - Vgs Ig Vds Vgs Rg Vgs Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L Vds Id Vgs Rg DUT Vgs Vds + DUT Vds - L Isd Vgs Ig Rev 3 : Dec 2010 Gate Charge ...

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