upa2708tp-e2-az Renesas Electronics Corporation., upa2708tp-e2-az Datasheet - Page 3

• Manufacturer Part Number: upa2708tp-e2-az
• Description: Switching N-channel Power Mosfet
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
70
60
50
40
30
20
10
0
0
120
100
80
60
40
20
0
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
V
0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
GS
- Drain to Source Voltage - V
20
1000
0.01
= 10 V
100
0.1
10
1
100
T
40
C
0.2
Single pulse
Single pulse
R
R
- Case Temperature -
µ
th(ch-A)
th(ch-C)
60
: Mounted on a galass epoxy board of 1 inch x 1 inch x 0.8 mm, T
: T
C
0.3
1 m
= 25°C
80
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
4.5 V
A
100
= 25°C)
0.4
Pulsed
10 m
120
˚C
Data Sheet G17034EJ1V0DS
0.5
140
PW - Pulse Width - s
100 m
160
1
100
0.1
10
0.01
100
1
0.1
0.01
10
1
FORWARD BIAS SAFE OPERATING AREA
A
T
Single pulse
I
FORWARD TRANSFER CHARACTERISTICS
D(pulse)
1
C
= 25°C
10
= 25°C
T
V
ch
DS
= −55°C
V
R
R
0.1
GS
- Drain to Source Voltage - V
150°C
th(ch-C)
th(ch-A)
25°C
75°C
- Gate to Source Voltage - V
2
100
= 3.68°C/W
= 96.2°C/W
I
D(DC)
1
3
1000
µ
V
Pulsed
10
PA2708TP
DS
4
= 10 V
10ms
1ms
DC
100
5
3