upa2708tp-e2-az Renesas Electronics Corporation., upa2708tp-e2-az Datasheet - Page 6

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upa2708tp-e2-az

Manufacturer Part Number
upa2708tp-e2-az
Description
Switching N-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
PACKAGE DRAWING (Unit: mm)
Power HSOP8
EQUIVALENT CIRCUIT
Gate
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
6
8
1
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
1
8
5.2
Source
4.1 MAX.
0.40
Drain
1.27 TYP.
+0.17
–0.2
2.0 ±0.2
+0.10
–0.05
9
5
4
4
5
Body
Diode
0.12 M
S
0.8 ±0.2
1, 2, 3
4
5, 6, 7, 8, 9: Drain
4.4 ±0.15
6.0 ±0.3
: Source
: Gate
0.10
Data Sheet G17034EJ1V0DS
S
µ
PA2708TP

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