upa2707tp Renesas Electronics Corporation., upa2707tp Datasheet - Page 2
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upa2707tp
Manufacturer Part Number
upa2707tp
Description
Switching N-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2707TP.pdf
(7 pages)
ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Gate Resistance
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
Ω
D.U.T.
G
I
D
= 25
50
I
D.U.T.
Ω
AS
Ω
Note
Note
BV
DSS
Starting T
R
V
Note
DD
V
L
DS
L
V
DD
ch
SYMBOL
R
R
V
V
| y
C
t
t
Q
Q
I
I
DS(on)1
DS(on)2
C
C
GS(off)
d(on)
d(off)
Q
F(S-D)
Q
R
DSS
GSS
A
t
t
t
oss
iss
rss
GS
GD
rr
fs
r
f
G
G
rr
= 25°C, All terminals are connected.)
|
Data Sheet G17035EJ1V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/
f = 1 MHz
V
0
D
F
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
DD
GS
GS
G
= 19 A, V
= 19 A, V
τ = 1 s
Duty Cycle
= 19 A
= 10 Ω
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V
=
= 10 V, I
= 4.5 V, I
= 0 V
= 15 V, I
= 10 V
= 15 V
= 5 V
TEST CIRCUIT 2 SWITCHING TIME
PG.
±
µ
20 V, V
TEST CONDITIONS
τ
GS
GS
D
D
D
D
≤
D
µ
GS
= 0 V
= 0 V
= 1 mA
= 10 A
= 10 A
= 10 A
1%
s
DS
= 10 A
= 0 V
R
= 0 V
G
D.U.T.
R
V
DD
L
MIN.
V
Wave Form
V
Wave Form
1.0
12
GS
DS
V
V
V
GS
DS
0
DS
0
6600
TYP.
970
530
130
3.3
4.1
0.8
1.2
10%
24
29
39
52
16
18
42
41
t
90%
d(on)
t
on
µ
10% 10%
t
r
PA2707TP
MAX.
±100
2.5
4.3
5.6
10
V
GS
t
d(off)
t
off
90%
UNIT
90%
t
f
mΩ
mΩ
µ
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
S
V
A