upa2707tp Renesas Electronics Corporation., upa2707tp Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/5/561/renesas_electronics_corporation__sml.jpg)
upa2707tp
Manufacturer Part Number
upa2707tp
Description
Switching N-channel Power Mosfet
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2707TP.pdf
(7 pages)
TYPICAL CHARACTERISTICS (T
80
60
40
20
0
0
120
100
80
60
40
20
0
V
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
GS
0.1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
- Drain to Source Voltage - V
20
= 10 V
1000
0.01
100
0.1
10
1
100
T
40
C
0.2
- Case Temperature -
Single pulse
R
R
µ
t h(ch-A )
t h(ch-C)
60
4.5 V
: M ount ed on galass epoxy board of 1 inch x 1 inch x 0.8 mm, T
: T
0.3
C
1 m
80
= 25°C
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
A
100
= 25°C)
0.4
Pulsed
10 m
120
˚C
Data Sheet G17035EJ1V0DS
0.5
140
PW - Pulse Width - s
100 m
160
1
100
0.1
10
0.01
100
1
0.1
0.01
10
1
FORWARD BIAS SAFE OPERATING AREA
A
T
Single pulse
FORWARD TRANSFER CHARACTERISTICS
I
I
0
= 25°C
D(pulse)
D(DC)
C
10
= 25°C
R
R
V
t h(ch-A)
t h(ch-C)
T
DS
V
ch
GS
0.1
- Drain to Source Voltage - V
1
= −55°C
- Gate to Source Voltage - V
150°C
= 3.13°C/W
100
= 96.2°C/W
25°C
75°C
2
1
1000
3
µ
10
PA2707TP
Pulsed
V
DS
4
= 10 V
1 ms
10 ms
DC
100
5
3