upa2781 Renesas Electronics Corporation., upa2781 Datasheet

upa2781

Manufacturer Part Number

upa2781

Description

Switching N-channel Power Mos Fet/schottky Barrier Diode

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2781.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

upa2781GR

Manufacturer:

RENESAS/瑞萨

Quantity:

20 000

Current page: 1 of 6
Download datasheet (64Kb)

Document No. G16420EJ1V0DS00 (1st edition)

Date Published April 2003 NS CP(K)

Printed in Japan

DESCRIPTION

Schottky Barrier Diode inside.

application.

FEATURES

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Total Power Dissipation

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC) [MOSFET]

Drain Current (pulse)

Average Forward Current

Total Power Dissipation

Channel & Junction Temperature

Storage Temperature

Notes 1. PW

The PA2781GR is N-channel Power MOSFET, which built a

This product is designed for synchronous DC/DC converter

Built a Schottky Barrier Diode

Low on-state resistance

Low C

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

2. Rectangle wave, 50% Duty Cycle

3. Mounted on ceramic substrate of 1200 mm

PART NUMBER

iss

= 7.6 m

= 11.3 m

= 12.9 m

: C

PA2781GR

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

= 900 pF TYP.

10 s, Duty Cycle

TYP. (V

Note1

Note3

Note2

= 0 V)

[SCHOTTKY]

[MOSFET]

= 10 V, I

= 0 V)

= 4.5 V, I

= 4.0 V, I

[SCHOTTKY]

Power SOP8

PACKAGE

= 7 A)

= 25°C. All terminals are connected.)

DATA SHEET

SWITCHING

x 2.2 mm

MOS FIELD EFFECT TRANSISTOR

D(pulse)

D(DC)

F(AV)

DSS

GSS

stg

, T

55 to + 150

±20

±13

±52

150

2.5

PACKAGE DRAWING (Unit: mm)

5.37 MAX.

0.40

1.27

+0.10

–0.05

0.78 MAX.

°C

PA2781GR

0.12 M

Gate

Protection

Diode

EQUIVALENT CIRCUIT

1, 2, 3

5, 6, 7, 8: Drain

0.5 ±0.2

6.0 ±0.3

4.4

: Source

: Gate

Source

Drain

0.8

0.10

Schottky

Diode

2002

Related parts for upa2781

upa2781 Summary of contents

Page 1

N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION The PA2781GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. FEATURES Built a Schottky Barrier Diode Low on-state resistance R = ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Note Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total ...

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upa2781 Renesas Electronics Corporation., upa2781 Datasheet

upa2781

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upa2781 Summary of contents

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