upa2781 Renesas Electronics Corporation., upa2781 Datasheet - Page 4

• Manufacturer Part Number: upa2781
• Description: Switching N-channel Power Mos Fet/schottky Barrier Diode
• Manufacturer: Renesas Electronics Corporation.

4
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
20
15
10
80
70
60
50
40
30
20
10
0
5
0
0.1
0
Pulsed
0.1
V
V
GS
DS
0.2 0.3 0.4
= 10 V
- Drain to Source Voltage - V
1000
I
D
100
0.1
10
- Drain Current - A
1
1
1 m
V
GS
= 4.0 V
4.5 V
0.5 0.6
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH (SCHOTTKY)
4.5 V
10 V
10
10 m
0.7
0.8 0.9
4.0 V
Pulsed
Data Sheet G16420EJ1V0DS
100 m
100
1
Single pulse
Mounted on ceramic substrate of 1200 mm
PW - Pulse Width - s
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
40
30
20
10
0
10
3
2
1
0
0
50
2
V
25
T
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
GS
ch
R
4
th(j-A)
- Channel Temperature - °C
- Gate to Source Voltage - V
0
100
6
= 125°C/W
2
25
x 2.2 mm
8
10
50
1000
12
75
14 16
I
D
100
= 7 A
PA2781GR
V
I
D
DS
= 1 mA
Pulsed
125
= 10 V
18
150
20