upa2503tm Renesas Electronics Corporation., upa2503tm Datasheet - Page 3

• Manufacturer Part Number: upa2503tm
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

TYPICAL CHARACTERISTICS (T
1000
0.01
100
120
100
0.1
10
80
60
40
20
1
0
0.1
0
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
R
(at V
Single pulse
Mounted on FR-4 board of 25 cm
DS(on)
GS
25
V
Limited
= 10 V)
T
I
DS
D(DC)
A
- Ambient Temperature - °C
- Drain to Source Voltage - V
1000
50
100
0.1
10
I
D(pulse)
1
1
1 m
75
100
2
PW = 1 ms
x 1.6 mm
10
10 m
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
125
A
= 25°C)
150
10 ms
30 ms
10 s
100 m
Data Sheet G16682EJ1V0DS
175
100
Single pulse
Mounted on FR-4 board of 25 cm
PW - Pulse Width - s
1
2.5
1.5
0.5
3
2
1
0
10
0
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
T
A
2
- Ambient Temperature - °C
x 1.6 mm
100
Mounted on FR-4 board of
25 cm
50
2
75
x 1.6 mm, PW ≤ 10 sec
100
1000
125 150
µ
PA2503
175
3