upa2503tm Renesas Electronics Corporation., upa2503tm Datasheet - Page 5

• Manufacturer Part Number: upa2503tm
• Description: N-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

1000
0.01
100
100
0.1
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
10
10
25
20
15
10
1
1
5
0
0.1
-50
0.4
I
Pulsed
D
V
Pulsed
t
SWITCHING CHARACTERISTICS
GS
= 8.0 A
f
V
F(S-D)
T
= 0 V
ch
- Channel Temperature - °C
0.6
V
0
- Source to Drain Voltage - V
I
GS
D
- Drain Current - A
1
= 4.5 V
10.0 V
0.8
50
t
t
r
d(on)
10
V
V
R
100
DD
GS
G
1
= 10 Ω
t
= 15.0 V
= 10.0 V
d(off)
Data Sheet G16682EJ1V0DS
150
100
1.2
10000
1000
100
0.1
100
10
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
5
4
3
2
1
0
1
0.01
0
0.1
V
I
V
R
V
Starting T
D
DYNAMIC INPUT CHARACTERISTICS
I
V
f = 1.0 MHz
DD
DD
GS
AS
G
= 16.0 A
GS
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
= 25 Ω
= 15.0 V
= 16.0 A
= 15.0 V
= 20.0 → 0 V
V
= 0 V
DS
4
L - Inductive Load - mH
- Drain to Source Voltage - V
Q
ch
G
0.1
= 25°C
- Gate Charge - nC
1
8
E
AS
1
10
= 25.6 mJ
12
µ
C
C
C
PA2503
rss
iss
oss
16
10
100
5