upa2560 Renesas Electronics Corporation., upa2560 Datasheet

upa2560

Manufacturer Part Number

upa2560

Description

Dual N-channel Mosfet For Switching

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2560.pdf (6 pages)

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Document No. G19947EJ1V0DS00 (1st edition)

Date Published September 2009 NS

Printed in Japan

inverters and power management applications of portable equipments.

contribute minimize the equipments.

FEATURES

• 4.5 V drive available

• Low on-state resistance

• Built-in gate protection diode

• Small and surface mount package (8-pin VSOF (2429))

ABSOLUTE MAXIMUM RATINGS (T

Notes 1. PW ≤ 10

ORDERING INFORMATION

Note Pb-free (This product does not contain Pb in the external electrode and other parts.)

Marking: 2560

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

DESCRIPTION

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (1 unit, 5 s)

Total Power Dissipation (2 units, 5 s)

Channel Temperature

Storage Temperature

The

Dual N-channel MOSFETs are assembled in one package, to

PA2560T1H-T1-AT

PA2560T1H-T2-AT

2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mm.

PART NUMBER

PA2560 is Dual N-channel MOSFETs designed for Back light

caution for electrostatic discharge.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

DS(on)1

DS(on)2

Note1

s, Duty Cycle ≤ 1%

= 50 mΩ MAX. (V

= 83 mΩ MAX. (V

Note

= 0 V)

LEAD PLATING

Note2

Pure Sn

Dual N-CHANNEL MOSFET

D(DC)

D(pulse)

= 10 V, I

= 4.5 V, I

stg

DSS

GSS

= 25°C)

FOR SWITCHING

DATA SHEET

8 mm embossed taping

−55 to +150

3000 p/reel

= 2 A)

PACKING

= 2 A)

±4.5

±20

±18

150

1.5

2.2

MOS FIELD EFFECT TRANSISTOR

°C

8-pin VSOF (2429)

PACKAGE

0.32±0.05

PACKAGE DRAWING (Unit: mm)

0.65

2.9±0.1

0.05 M S A

EQUIVALENT CIRCUIT (1/2)

PA2560

Gate

Protection

Diode

Source

Drain

1: Source1

2: Gate1

3: Source2

4: Gate2

5, 6: Drain2

7, 8: Drain1

0.17±0.05

0 to 0.025

Body

Diode

2009

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upa2560 Summary of contents

Page 1

DESCRIPTION μ The PA2560 is Dual N-channel MOSFETs designed for Back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. FEATURES • 4.5 V drive available • ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

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upa2560 Renesas Electronics Corporation., upa2560 Datasheet

upa2560

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