upa2560 Renesas Electronics Corporation., upa2560 Datasheet - Page 2

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upa2560

Manufacturer Part Number
upa2560
Description
Dual N-channel Mosfet For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
ELECTRICAL CHARACTERISTICS (T
Note Pulsed
2
V
0
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage
GS
τ = 1 s
Duty Cycle ≤ 1%
TEST CIRCUIT 1 SWITCHING TIME
PG.
μ
τ
CHARACTERISTICS
R
G
D.U.T.
Note
Note
R
V
DD
L
Note
I
Wave Form
V
Wave Form
D
GS
I
I
V
| y
R
R
C
C
C
t
t
t
t
Q
V
DSS
GSS
d(on)
r
d(off)
f
SYMBOL
GS(off)
F(S-D)
DS(on)1
DS(on)2
iss
oss
rss
G
A
fs
V
I
D
GS
|
0
0
= 25°C)
10%
t
10%
d(on)
Data Sheet G19947EJ1V0DS
t
90%
on
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
I
I
D
F
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
t
= 4.5 A, V
r
= 4.5 A
V
= 6 Ω
I
= 30 V, V
= ±16 V, V
= 10 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V,
= 0 V,
= 15 V, I
= 10 V,
= 24 V, V
D
GS
t
d(off)
TEST CONDITIONS
t
off
90%
90%
GS
D
D
D
D
t
D
10%
GS
GS
f
= 1 mA
= 2 A
= 2 A
= 2 A,
DS
= 0 V
= 2 A
= 0 V
= 10 V,
= 0 V
PG.
TEST CIRCUIT 2 GATE CHARGE
MIN.
1.0
1
I
G
50 Ω
= 2 mA
TYP.
310
2.8
2.4
6.6
0.9
38
48
65
27
15
6
D.U.T.
MAX.
±10
2.5
μ
50
83
1
PA2560
UNIT
R
V
nC
μ
μ
pF
pF
pF
ns
ns
ns
ns
DD
V
S
V
L
A
A

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