upa2352 Renesas Electronics Corporation., upa2352 Datasheet

upa2352

Manufacturer Part Number

upa2352

Description

Dual N-channel Mosfet

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA2352.pdf (9 pages)

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<R>

Document No.

Date Published

Printed in Japan

DESCRIPTION

Ion battery protection circuit.

(EFLIP).

FEATURES

•

ORDERING INFORMATION

Note "-A" indicates Pb-free (This product does not contain Pb in

ABSOLUTE MAXIMUM RATINGS (T

Source to Source Voltage (V

Gate to Source Voltage (V

Source Current (DC)

Source Current (pulse)

Total Power Dissipation (2units)

Channel Temperature

Storage Temperature

Notes 1. Mounted on BT resin board of 40.5 mm x 25 mm x 1.5 mm

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

The

Ecologically Flip chip MOSFET for Lithium-Ion battery Protection

Connecting the Drains on the circuit board is not required

because the Drains of the FET1 and the FET2 are internally

connected.

Monolithic Dual MOSFET

2.5 V drive available and low on-state resistance

Built-in G-S protection diode against ESD

Pb-free bump

PA2352T1G-E4-A

SS(on)1

SS(on)2

SS(on)3

SS(on)4

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

PART NUMBER

2. PW ≤ 100

PA2352 is a Dual N-channel MOSFET designed for Lithium-

external electrode and other parts)."-E4" indicates the unit

orientation (-E4 only).

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

G17881EJ2V0DS00 (2nd edition)

October 2006 NS CP(K)

= 43.0 mΩ MAX. (V

= 45.0 mΩ MAX. (V

= 55.0 mΩ MAX. (V

= 67.0 mΩ MAX. (V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Note

Note1

s, Duty Cycle ≤ 1%

Note2

= 0 V)

Note1

= 4.5 V, I

= 4.0 V, I

= 3.1 V, I

= 2.5 V, I

4 PIN EFLIP

PACKAGE

Dual N-CHANNEL MOSFET

The mark <R> shows major revised points.

= 2.0 A)

= 25°C)

S(pulse)

S(DC)

GSS

SSS

stg

DATA SHEET

−55 to +150

±4.0

0.75

±12

±40

150

MOS FIELD EFFECT TRANSISTOR

°C

1-pin index mark S1

0.08 S

Source1

OUTLINE DRAWING (Unit: mm)

1.40 ± 0.02

TOP VIEW

FET1

Gate1

EQUIVALENT CIRCUIT

Dot area (For in-house)

Body Diode

0.1

PA2352

0.2 ± 0.02

0.28 ± 0.03

FET2

Gate2

BOTTOM VIEW

Source2

0.65

Gate

Protection

Diode

S1 : Source1

G1 : Gate1

G2 : Gate2

S2 : Source2

4 - φ 0.37

2006

0.65

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upa2352 Summary of contents

Page 1

DESCRIPTION μ The PA2352 is a Dual N-channel MOSFET designed for Lithium- Ion battery protection circuit. Ecologically Flip chip MOSFET for Lithium-Ion battery Protection (EFLIP). FEATURES • Monolithic Dual MOSFET Connecting the Drains on the circuit board is not required ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS SYMBOL Zero Gate Voltage Source Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Source to Source On-state Note Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay ...

Page 3

TEST CIRCUIT 5 R SS(on TEST CIRCUIT 7 C iss Capacitance Capacitance Bridge Bridge S1 S1 TEST ...

Page 4

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 100 125 150 175 T - Ambient Temperature - °C A <R> FORWARD BIAS SAFE OPERATING AREA ...

Page 5

SOURCE CURRENT vs. SOURCE TO SOURCE VOLTAGE 4 4 TEST CIRCUIT 5 Pulsed Source to Source Voltage - V ...

Page 6

SOURCE TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 TEST CIRCUIT 2 2 Pulsed 3.1 V 4 Channel ...

Page 7

When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding the following contents. If used exceeding recommended conditions, there is a possibility of causing the device ...

Page 8

Figure 1 Recommended soldering conditions of INFRARED REFLOW Maximum temperature (Package's surface temperature) Time at maximum temperature Time of temperature higher than 220˚C Preheating time at 160 to 180˚C Maximum number of reflow processes Maximum chlorine content of rosin flux ...

Page 9

The information in this document is current as of October, 2006. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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