upa2351t1p Renesas Electronics Corporation., upa2351t1p Datasheet - Page 2
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upa2351t1p
Manufacturer Part Number
upa2351t1p
Description
Dual Nch Mosfet For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2351T1P.pdf
(9 pages)
ELECTRICAL CHARACTERISTICS (T
Note Pulsed
Test circuits are example of measuring the FET1 side.
TEST CIRCUIT 1 I
TEST CIRCUIT 3 V
When FET1 is
measured, between
GATE and SOURCE
of FET2 are shorted.
2
Zero Gate Voltage Source Current
Gate Leakage Current
Gate to Source Cut-off Voltage
Forward Transfer Admittance
Source to Source On-state
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Body Diode Forward Voltage
CHARACTERISTICS
Note
SSS
GS(off)
V
GS
G1
G2
Note
Note
G1
G1
G2
G2
S2
I
I
V
| y
R
R
R
R
C
C
C
t
T
t
T
Q
V
SSS
GSS
d(on)
d(off)
SYMBOL
GS(off)
r
f
F(S-S)
S2
S2
SS(on)1
SS(on)2
SS(on)3
SS(on)4
iss
oss
rss
G
S1
fs
|
S1
S1
A
= 25°C) These are common to FET1 and FET2.
A
A
A
V
V
V
V
V
V
V
V
V
V
TEST CIRCUIT 7
V
V
TEST CIRCUIT 8
V
TEST CIRCUIT 9
I
Data Sheet G19740EJ1V0DS
F
SS
V
SS
GS
SS
SS
GS
GS
GS
GS
SS
DD
GS
DD
= 5.7 A, V
SS
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±12 V, V
= 4.5 V, I
= 4.0 V, I
= 3.1 V, I
= 2.5 V, I
= 10 V, I
= 4.0 V, R
= 15 V, V
TEST CIRCUIT 2 I
When FET1 is
measured, between
GATE and SOURCE
of FET2 are shorted.
TEST CIRCUIT 4 | y
ΔI
S
TEST CONDITIONS
GS
S
S
/ΔV
S
GS
S
S
S
S
GS
G1S1
= 1.0 mA, TEST CIRCUIT 3
= 3.0 A, TEST CIRCUIT 4
= 5.7 A,
G
= 0 V, TEST CIRCUIT 6
SS
= 3.0 A, TEST CIRCUIT 5
= 3.0 A, TEST CIRCUIT 5
= 3.0 A, TEST CIRCUIT 5
= 3.0 A, TEST CIRCUIT 5
= 0 V, TEST CIRCUIT 1
= 0 V, f = 1.0 MHz
= 6.0 Ω,
GS
= 0 V, TEST CIRCUIT 2
= 4.0 V, I
S
= 5.7 A,
GSS
fs
|
V
V
GS
GS
G1
G1
G2
G2
A
A
MIN.
0.5
2.5
G2
G2
24
25
28
31
G1
G1
S2
S2
TYP.
523
120
150
110
S1
S1
1.0
7.7
7.1
0.9
32
33
37
45
96
66
24
μ
S2
PA2351T1P
A
S1
S1
A
MAX.
V
±10
1.5
40
42
50
64
SS
1
UNIT
mΩ
mΩ
mΩ
mΩ
μ
μ
pF
pF
pF
nC
ns
ns
ns
ns
V
S
V
A
A