upa2451b Renesas Electronics Corporation., upa2451b Datasheet - Page 6
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upa2451b
Manufacturer Part Number
upa2451b
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2451B.pdf
(8 pages)
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<Notes for using this device safely>
the following contents. If used exceeding recommended conditions, there is a possibility of causing failure of
the device and characteristic degradation.
1. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared
2. When you wash the device mounted the substrate, carry out within our recommended conditions. If washed
3. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance generator
4. Please refer to Figure 1 as an example of the land pattern. Optimize the land pattern in consideration of density,
6
When you use this device, in order to prevent a customer’s hazard and damage, use it with understanding
reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result in
failure.
exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.
directly. If it touches, the characteristic of a device may be degraded and it may result in failure.
appearance of solder fillets, common difference, etc in an actual design.
0.50
Figure 1. Example of the land pattern
Data Sheet G16636EJ1V0DS
2.04
3.86
0.83
Unit: mm
0.30
µ
PA2451B