upa2451b Renesas Electronics Corporation., upa2451b Datasheet - Page 7
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upa2451b
Manufacturer Part Number
upa2451b
Description
N-channel Mos Field Effect Transistor For Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA2451B.pdf
(8 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
upa2451bTL-E1-A
Manufacturer:
NSC
Quantity:
4 123
Part Number:
upa2451bTL-E1-A
Manufacturer:
NEC
Quantity:
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5. This device is very thin device and should be handled with caution for mechanical stress. The rate of distortion
Note 1. Definition of rate of distortion (written as ε in this document)
applied to the device should become below 2000
characteristic of a device may be degraded and it may result in failure.
2. The relation of the distortion and the bend changes with several conditions, such as a size of substrate and
so on.
ε = (l − l
l
l: Distance above-mentioned when receiving stress.
0
: Distance for two arbitrary points before receiving stress.
0
The substrate that mounted the device is on a stand with a support width of 24 mm.
The device is turned downward. The stress is applied from a top.
)/l
Support width 24 mm
0
6000
5000
4000
3000
2000
1000
0
Figure 3. Example of the bend and the rate of distortion
0
Stress
0.2
Figure 2. Direction of substrate and stress
Bend - mm
0.4
Data Sheet G16636EJ1V0DS
0.6
µ
ε.
Note1
0.8
If the rate of distortion exceeds 2000
Substrate: 33 x 6 mm, t = 0.5 mm, FR-4
The direction of a device:
Measurement position
Device
1
Recommended condition
Bend
Note2
µ
ε, the
µ
PA2451B
7