ta1310ang TOSHIBA Semiconductor CORPORATION, ta1310ang Datasheet - Page 75
![no-image](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_sml.jpg)
ta1310ang
Manufacturer Part Number
ta1310ang
Description
Ntsc Video, Chroma, Deflection, And Distortion Compensation Ic With Yuv Interface And Acb
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TA1310ANG.pdf
(106 pages)
- Current page: 75 of 106
- Download datasheet (3Mb)
NOTE
T
T
T
T
48
49
50
51
ACB Protection
Circuit
Operating
monitor 1
ACB Protection
Circuit
Operating
monitor 2
ACB Protection
Circuit
Operating
monitor 3
Base BandTint
Adjustment
Characteristics
ITEM
ANG RMAX
ANG BMAX
ANG RMIN
ACBBRAR
ACBBRAG
ANG BMIN
ACBBRLO
SYMBOL
ACBPR
ACBPG
S
A
A
A
A
03
S
A
A
A
A
04
SW MODE & SUB ADDRESS & DATA
S
A
A
A
A
05
OFF
OFF
OFF
OFF
S52
S
06
S
S53
ON
A
A
A
07
S
ON
A
A
A
−
08
S
A
A
A
−
09
OFF
OFF
OFF
OFF
S
10
S
75
C
C
C
C
54
1)
2)
3)
4)
1)
2)
3)
4)
1)
2)
3)
4)
1)
2)
3)
4)
5)
6)
7)
8)
Set the subaddress (11) data to (A0).
Apply 8.0 V to pin 17.
Monitor pin 13 and confirm that the picture period has not dropped to the BLK level
(ACBPR).
Monitor pin 14 and confirm that the picture period has not dropped to the BLK level
(ACBPG)
Set the subaddress (11) data to (C0).
Apply 8.0 V to pin 17.
Monitor pin 13 and confirm that the picture period is at the BLK level (ACBBRAR).
Monitor pin 14 and confirm that the picture period is at the BLK level (ACBBRAG)
Set the subaddress (11) data to (C0).
Apply 6.8 V to 9 V V
Apply 6.8 V to pin 17.
Monitor pin 13 and confirm that the picture period has not dropped to the BLK level
(ACBBRLO)
Change subaddress (05) H to (81) H.
Set unicolor = max ; bright = max ; color = center.
Input signal 1 (f
To pin 52, input a signal with the same amplitude but 90°C phase advanced
compared to the signal input to pin 53.
When subaddress (14) H is changed to (C0) H → (80) H, measure the amount of
change in the output phase of pin 13. (ANG RMIN)
Under the same conditions as 5) above, measure the amount of change in the
output phase of pin 15. (ANG BMIN)
When subaddress (14) H is changed to (C0) H → (FF), measure the amount of
change in the output phase of pin 13. (ANG RMAX)
Under the same conditions as 7) above, measure the amount of change in the
output phase of pin 15. (ANG BMAX)
(TEST CONDITIONS V
0
= 100 kHz, 100 mV
CC
(pin 16).
MEASUREMENT METHOD
CC
p-p
= 5 V and 9 V, Ta = 25 ± 3°C)
) to pin 53.
TA1310ANG
2005-09-20
Related parts for ta1310ang
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
![MG100Q2YS65H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG300J2YS40](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG100Q2YS11](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MP7003](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG30G6EL2](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MP6759](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG400J101H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG30J103H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG600J2YS60A](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG1200V1US51](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG300J101H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MG150J7KS50](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG15J503H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG75J6CSB1W](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
![MIG75J201H](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_tmb.jpg)
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet: