hmc591 Hittite Microwave Corporation, hmc591 Datasheet

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hmc591

Manufacturer Part Number
hmc591
Description
2 Watt Power Amplifier Chip, 6 - 10 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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3 - 90
3
Typical Applications
The HMC591 is ideal for use as a power amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military End-Use
• Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB
Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)
[1] Adjust Vgg between -2 to 0V to achieve Idd= 1340 mA typical.
[2] Measurement taken at 7V @ 940mA, Pin / Tone = -15 dBm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
[2]
v01.0107
T
A
Order On-line at www.hittite.com
= +25° C, Vdd = +7V, Idd = 1340 mA
Min.
20
30
6 - 10
1340
Typ.
0.05
33.5
23
33
43
12
11
Features
Saturated Output Power: +34 dBm @ 24% PAE
Output IP3: +43 dBm
Gain: 23 dB
DC Supply: +7.0 V @ 1340 mA
50 Ohm Matched Input/Output
2.47 mm x 2.49 mm x 0.1 mm
General Description
The HMC591 is a high dynamic range GaAs PHEMT
MMIC 2 Watt Power Amplifi er which operates from
6 to 10 GHz. This amplifi er die provides 23 dB of
gain and +34 dBm of saturated power, at 24% PAE
from a +7.0V supply. Output IP3 is +43 dBm typical.
The RF I/Os are DC blocked and matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All data is taken with the chip in a 50 ohm test
fi xture connected via 0.025mm (1 mil) diameter wire
bonds of length 0.31mm (12 mils). For applications
which require optimum OIP3, Idd should be set for 940
mA, to yield +43 dBm OIP3. For applications which
require optimum output P1dB, Idd should be set for
1340 mA, to yield +33 dBm Output P1dB.
POWER AMPLIFIER, 6 - 10 GHz
Max.
GaAs PHEMT MMIC 2 WATT
Min.
30.5
20
[1]
6.8 - 9
1340
Typ.
0.05
33.5
23
14
10
34
43
HMC591
Max.
dB/ °C
Units
dBm
dBm
dBm
GHz
mA
dB
dB
dB

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hmc591 Summary of contents

Page 1

... Typical Applications The HMC591 is ideal for use as a power amplifi er for: • Point-to-Point Radios 3 • Point-to-Multi-Point Radios • Test Equipment & Sensors • Military End-Use • Space Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain Gain Variation Over Temperature ...

Page 2

... Output Return Loss vs. Temperature 0 -5 -10 -15 -20 - Psat vs. Temperature 9 6.5 7 Order On-line at www.hittite.com HMC591 +25C +85C -40C 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) +25C +85C -40C FREQUENCY (GHz) +25C +85C -55C 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz) ...

Page 3

... Output IM3 1340 Order On-line at www.hittite.com HMC591 GaAs PHEMT MMIC 2 WATT 940 mA 1140 mA 1340 mA 6 6.5 7 7.5 8 8.5 9 9.5 FREQUENCY (GHz) Pout Gain PAE - INPUT POWER (dBm) 6 GHz 7 GHz ...

Page 4

... Typical Supply Current vs. Vdd Vdd (V) +6.5 +7.0 +7.5 Note: Amplifi er will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 1340 mA at +7.0V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Order On-line at www.hittite.com HMC591 GAIN P1dB Psat 1140 1340 6GHz 7GHz 8GHz 9GHz 10GHz ...

Page 5

... ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” Alternate 3. TYPICAL BOND PAD IS .004” SQUARE [2] 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE ± .002 Order On-line at www.hittite.com HMC591 ...

Page 6

... Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER GHz Description This pad is AC coupled and matched to 50 Ohms. This pad is AC coupled and matched to 50 Ohms. 0.1 μF are required. Order On-line at www.hittite.com HMC591 Interface Schematic ...

Page 7

... Assembly Diagram 3 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 v00.0806 GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER GHz Order On-line at www.hittite.com HMC591 ...

Page 8

... Thick GaAs MMIC 0.076mm 0.102mm (0.004”) Thick GaAs MMIC 0.076mm 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC591 Wire Bond (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. Wire Bond (0.003” ...

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