hmc594 Hittite Microwave Corporation, hmc594 Datasheet

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... DC Supply: +6V @ 100 mA 50 Ohm Matched Input/Output Die Size: 1.32 x 1.21 x 0.10 mm General Description The HMC594 is a GaAs PHEMT MMIC Low Noise Amplifi er (LNA) chip which operates from GHz. The HMC594 features extremely fl at performance characteristics including small signal gain, 2 noise fi gure and output IP3 of +36 dBm across the operating band ...

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... Output Return Loss vs. Temperature 0 -5 -10 -15 -20 -25 -30 3. 2.25 2.5 Reverse Isolation vs. Temperature 0 -5 -10 -15 -20 -25 - 2.25 2.5 Order On-line at www.hittite.com HMC594 AMPLIFIER GHz +25C +85C -55C 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -55C 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) +25C +85C -55C 2.75 3 3.25 3.5 3.75 4 FREQUENCY (GHz) ...

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... Gain, Noise Figure & Power vs. Supply Voltage @ 3 GHz 40 35 Gain 30 P1dB Psat OIP3 5.5 6 Vdd SUPPLY VOLTAGE (Vdc) Order On-line at www.hittite.com HMC594 AMPLIFIER GHz +25C +85C -40C 2 2.25 2.5 2.75 3 3.25 3.5 3.75 FREQUENCY (GHz) Pout Gain PAE - ...

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... ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Order On-line at www.hittite.com HMC594 AMPLIFIER GHz Idd (mA) 97 100 103 ...

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... Power Supply Voltage for the amplifi er. External bypass capacitors of 100 pF and 0.1 μF are required. This pad is AC coupled and matched to 50 Ohms from GHz. Gate supply voltage for the amplifi er. External bypass capacitors of 100 pF and 0.1 μF are required. Order On-line at www.hittite.com HMC594 AMPLIFIER GHz Interface Schematic ...

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... Thick GaAs MMIC 0.076mm 0.102mm (0.004”) Thick GaAs MMIC 0.076mm 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC594 AMPLIFIER GHz Wire Bond (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1 ...