hmc519 Hittite Microwave Corporation, hmc519 Datasheet

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hmc519

Manufacturer Part Number
hmc519
Description
Low Noise Amplifier Chip, 18 - 32 Ghz
Manufacturer
Hittite Microwave Corporation
Datasheet

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1 - 72
1
Typical Applications
The HMC519 is ideal for use as either a LNA or driver
amplifi er for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios & VSAT
• Test Equipment & Sensors
• Military & Space
Functional Diagram
Electrical Specifi cations,
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Parameter
T
A
v01.0907
= +25° C, Vdd 1, 2, 3 = +3V
Order On-line at www.hittite.com
Min.
12
9
18 - 28
Features
Noise Figure: 2.8 dB
Gain: 15 dB
OIP3: 23 dBm
Single Supply: +3V @ 65 mA
50 Ohm Matched Input/Output
Die Size: 2.27 x 1.32 x 0.1 mm
General Description
The HMC519 chip is a high dynamic range GaAs
PHEMT MMIC Low Noise Amplifi er (LNA) which
covers the 18 to 32 GHz frequency range. The
HMC519 provides 15 dB of small signal gain, 2.8 dB
of noise fi gure and has an output IP3 greater than
23 dBm. The chip can easily be integrated into hy-
brid or MCM assemblies due to its small size. All data
is tested with the chip in a 50 Ohm test fi xture con-
nected via 0.075 mm (3 mil) ribbon bonds of minimal
length 0.31 mm (12 mil). Two 0.025 mm (1 mil) diameter
bondwires may also be used to make the RFIN and
RFOUT connections.
0.015
Typ.
2.8
15
13
12
12
15
23
65
GaAs PHEMT MMIC LOW NOISE
0.025
Max.
3.5
88
AMPLIFIER, 18 - 32 GHz
Min.
11
10
28 - 32
0.015
Typ.
3.5
14
12
14
18
26
65
9
HMC519
0.025
Max.
4.5
88
dB/ °C
Units
GHz
dBm
dBm
dBm
mA
dB
dB
dB
dB

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hmc519 Summary of contents

Page 1

... Typical Applications The HMC519 is ideal for use as either a LNA or driver amplifi er for: • Point-to-Point Radios • Point-to-Multi-Point Radios & VSAT • Test Equipment & Sensors • Military & Space Functional Diagram Electrical Specifi cations, Parameter Frequency Range Gain Gain Variation Over Temperature ...

Page 2

... Output Return Loss vs. Temperature 0 -5 -10 -15 - Output IP3 vs. Temperature Order On-line at www.hittite.com HMC519 +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C FREQUENCY (GHz) +25C +85C -55C ...

Page 3

... Gain, Noise Figure & Power vs. Supply Voltage @ 24 GHz 20 Gain 16 P1dB 12 8 Noise Figure 4 0 2.5 3 Vdd (V) Order On-line at www.hittite.com HMC519 AMPLIFIER GHz +25C +85C -55C FREQUENCY (GHz) Pout Gain PAE -15 - INPUT POWER (dBm) ...

Page 4

... OBSERVE HANDLING PRECAUTIONS [1] NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. Order On-line at www.hittite.com HMC519 1 Idd (mA ...

Page 5

... Power Supply Voltage for the amplifi er. External bypass capacitors of 100 pF and 0.1 μF are required. This pad is AC coupled and matched to 50 Ohms. These pads must be connected to RF/DC ground for proper operation. Die Bottom must be connected to RF/DC ground. Order On-line at www.hittite.com HMC519 AMPLIFIER GHz Interface Schematic ...

Page 6

... Thick GaAs MMIC 0.076mm 0.102mm (0.004”) Thick GaAs MMIC 0.076mm 0.150mm (0.005”) Thick Moly Tab Order On-line at www.hittite.com HMC519 3 mil Ribbon Bond (0.003”) RF Ground Plane 0.127mm (0.005”) Thick Alumina Thin Film Substrate Figure 1. 3 mil Ribbon Bond (0.003” ...

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