h55s1g32mfp-60 Hynix Semiconductor, h55s1g32mfp-60 Datasheet - Page 31
h55s1g32mfp-60
Manufacturer Part Number
h55s1g32mfp-60
Description
32mx32bit Mobile Sdram
Manufacturer
Hynix Semiconductor
Datasheet
1.H55S1G32MFP-60.pdf
(53 pages)
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Part Number:
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Com m and
Address
CLK
READ BURST TERMINATE
Data from any READ burst may be truncated with a BURST TERMINATE command. The BURST TERMINATE latency is
equal to the read (CAS) latency, i.e., the BURST TERMINATE command should be issued X cycles after the READ com-
mand where X equals the desired data-out element.
Rev 1.2 / Jun. 2008
DQ
DQ
1) Do
2) BA, Col
3) Cases shown are bursts of 4, 8, or full page term inated after 2 data elem ents
BA, Col
READ
n
n
: Data out from column n
n
= Bank A, Colum n n
CL =2
CL =3
BURST
Do
n
Do
Do
Terminating a Read Burst
n'
n
Do
n'
1Gbit (32Mx32bit) Mobile SDR Memory
H55S1G(2/3)2MFP Series
Don't Care
11
31
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