h55s1g32mfp-60 Hynix Semiconductor, h55s1g32mfp-60 Datasheet - Page 8

• Manufacturer Part Number: h55s1g32mfp-60
• Description: 32mx32bit Mobile Sdram
• Manufacturer: Hynix Semiconductor

ABSOLUTE MAXIMUM RATING
DC OPERATING CONDITION
Note :
1. All Voltages are referenced to V
2. V
AC OPERATING TEST CONDITION
Rev 1.2 / Jun. 2008
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to V
Voltage on V
Voltage on V
Short Circuit Output Current
Power Dissipation
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
DDQ
must not exceed the level of V
Parameter
DD
DDQ
relative to V
relative to V
Parameter
Parameter
SS
SS
SS
SS
= 0V
DD
Symbol
V
V
V
V
DDQ
(T
DD
IH
IL
A
= -30 to 85
(T
A
= -30 to 85
0.8*V
Min
-0.3
1.7
1.7
o
C )
DDQ
o
V
C, V
V
Symbol
Symbol
IN
V
1Gbit (32Mx32bit) Mobile SDR Memory
IH
t
V
R
V
T
outref
V
, V
I
CL
DDQ
PD
T
trip
STG
OS
Typ
/ t
DD
/ V
1.8
1.8
A
DD =
-
-
OUT
F
IL
1.8V, V
V
0.2*V
0.9*V
0.2*V
0.5*V
0.5*V
DDQ+
-0.3 ~ VDDQ+0.3
Max
1.95
1.95
Value
SS
H55S1G(2/3)2MFP Series
1
DDQ
DDQ
-0.3 ~ 2.7
-0.3 ~ 2.7
-55 ~ 150
= 0V)
-30 ~ 85
DDQ
DDQ
DDQ
0.3
Rating
50
1
/
Unit
V
V
V
V
Unit
ns
pF
V
V
V
Unit
mA
Note
o
o
W
1, 2
1, 2
1, 2
V
V
V
C
C
Note
1
11
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